vishay sfh617a document number 83740 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 1 2 4 3 e c a c 17907 pb p b -free e3 optocoupler, high reliability, 5300 v rms features ? good ctr linearity depending on forward current isolation test voltage, 5300 v rms high collector-emitter voltage, v ceo = 70 v low saturation voltage fast switching times low ctr degradation temperature stable low coupling capacitance end-stackable, .100 " (2.54 mm) spacing high common-mode interference immunity lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 csa 93751 description the sfh617a (dip) feature a high current transfer ratio, low coupling capacitance and high isolation volt- age. these couplers have a gaas infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic dip-4 package. the coupling devices are designed for signal trans- mission between two electrically separated circuits. the couplers are end-stackable with 2.54 mm spac- ing. creepage and clearance distances of > 8.0 mm are achieved with option 6. this version complies with iec 60950 (din vde 0805) for reinforced insulation up to an operation voltage of 400 v rms or dc. spec- ifications subject to change. order information for additional information on t he available options refer to option information. part remarks sfh617a-1 ctr 40 - 80 %, dip-4 sfh617a-2 ctr 63 - 125 %, dip-4 sfh617a-3 ctr 100 - 200 %, dip-4 sfh617a-4 ctr 160 - 320 %, dip-4 SFH617A-1X006 ctr 40 - 80 %, dip-4 400 mil (option 6) sfh617a-2x006 ctr 63 - 125 %, dip-4 400 mil (option 6) sfh617a-2x009 ctr 63 - 125 %, smd-4 (option 9) sfh617a-3x006 ctr 100 - 200 %, dip-4 400 mil (option 6) sfh617a-3x007 ctr 100 - 200 %, smd-4 (option 7) sfh617a-4x006 ctr 160 - 320 %, dip-4 400 mil (option 6)
www.vishay.com 2 document number 83740 rev. 1.4, 26-oct-04 vishay sfh617a vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t 10 si fsm 2.5 a power dissipation p diss 100 mw parameter test condition symbol value unit collector-emitter voltage v ce 70 v emitter-collector voltage v ec 7.0 v collector current i c 50 ma t 1.0 ms i c 100 ma power dissipation p diss 150 mw parameter test condition symbol value unit isolation test voltage between emitter and detector, refer to climate din 40046, part 2, nov. 74 v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm insulation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vdeo 303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature max. 10 s. dip soldering distance to seating plane 1.5 mm t sld 260 c
vishay sfh617a document number 83740 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input (ir gaas) output (si phototransistor) coupler 0 50 100 150 200 0 25 50 75 100 125 150 18483 p Cpower dissipation (mw) tot phototransistor diode t amb C ambient temperature ( q c ) figure 1. permissible power dissi pation vs. ambient temperature parameter test condition symbol min ty p. max unit forward voltage i f = 60 ma v f 1.25 1.65 v reverse current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 13 pf thermal resistance r thja 750 k/w parameter test condition part symbol min ty p. max unit collector-emitter capacitance v ce = 5 v, f = 1.0 mhz c ce 5.2 pf thermal resistance r thja 500 k/w collector-emitter leakage current v ce = 10 v sfh617a-1 i ceo 2.0 50 na sfh617a-2 i ceo 2.0 50 na sfh617a-3 i ceo 5.0 100 na sfh617a-4 i ceo 5.0 100 na parameter test condition symbol min ty p. max unit collector-emitter saturation voltage i f = 10 ma, f = 1.0 mhz v cesat 0.4 0.25 v coupling capacitance c c 0.4 pf
www.vishay.com 4 document number 83740 rev. 1.4, 26-oct-04 vishay sfh617a vishay semiconductors current transfer ratio switching characteristics without saturation with saturation parameter test condition part symbol min ty p. max unit i c /i f i f = 10 ma, v ce = 5.0 v sfh617a-1 ctr 40 80 % sfh617a-2 ctr 63 125 % sfh617a-3 ctr 100 200 % sfh617a-4 ctr 160 320 % i f = 1.0 ma, v ce = 5.0 v sfh617a-1 ctr 13 30 % sfh617a-2 ctr 22 45 % sfh617a-3 ctr 34 70 % sfh617a-4 ctr 56 90 % parameter te s t c o n d i t i o n symbol min ty p. max unit turn-on time i f = 10 ma, v cc = 5.0 v, r l = 75 ? t on 3.0 s rise time i f = 10 ma, v cc = 5.0 v, r l = 75 ? t r 2.0 s turn-off time i f = 10 ma, v cc = 5.0 v, r l = 75 ? t off 2.3 s fall time i f = 10 ma, v cc = 5.0 v, r l = 75 ? t f 2.0 s cut-off frequency i f = 10 ma, v cc = 5.0 v, f ctr 250 khz parameter te s t c o n d i t i o n part symbol min ty p. max unit turn-on time i f = 20 ma sfh617a-1 t on 3.0 s i f = 10 ma sfh617a-2 t on 4.2 s sfh617a-3 t on 4.2 s i f = 5.0 ma sfh617a-4 t on 6.0 s rise time i f = 20 ma sfh617a-1 t r 2.0 s i f = 10 ma sfh617a-2 t r 3.0 s sfh617a-3 t r 3.0 s i f = 5.0 ma sfh617a-4 t r 4.6 s turn-off time i f = 20 ma sfh617a-1 t off 18 s i f = 10 ma sfh617a-2 t off 23 s sfh617a-3 t off 23 s i f = 5.0 ma sfh617a-4 t off 25 s fall time i f = 20 ma sfh617a-1 t f 11 s i f = 10 ma sfh617a-2 t f 14 s sfh617a-3 t f 14 s i f = 5.0 ma sfh617a-4 t f 15 s
vishay sfh617a document number 83740 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 typical characteris tics (tamb = 25 c unless otherwise specified) figure 2. linear operation ( without saturation) figure 3. switching operation (with saturation) figure 4. current transfer ra tio (ctr) vs. temperature isfh610a_01 r l =75 ? v cc =5v i c 47 ? i f isfh610a_02 1.0 k ? v cc =5v 47 ? i f isfh610a_03 i f = 10 ma, v cc = 5.0 v fiure 5.outputcharacteristics(typ.)collectorcurrents. collectormittervoltae fiure 6.diodeforardvolt aes.forardcurrent fiure 7.transistorcapacitance(t yp.)s.collectormitter voltae isfh610a_04 isfh610a_05 v f =f(i f ) isfh610a_06 f = 1.0 mhz
www.vishay.com 6 document number 83740 rev. 1.4, 26-oct-04 vishay sfh617a vishay semiconductors package dimensions in inches (mm) figure 8. permissible pulse handl ing capability forward current vs. pulse width isfh610a_07 pulse cycle d = parameter, fiure 9.permissilepoerdissipations.temperature p tot =f(t a ) isfh610a_08 i178027 .255 (6.48) .268 (6.81) 1 2 4 3 .179 (4.55) .190 (4.83) pin one id .030 (.76) .045 (1.14) 4 typ. .100 (2.54) .130 (3.30) .150 (3.81) .020 (.508 ) .035 (.89) 10 3C9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .031 (.79) typ. .050 (1.27) typ. .300 (7.62) typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) .050 (1.27) iso method a
vishay sfh617a document number 83740 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
www.vishay.com 8 document number 83740 rev. 1.4, 26-oct-04 vishay sfh617a vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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